Job Description:


Intel Dalian Memory Technology and Manufacturing (DMTM) is high-volume
manufacturing memory fab in Intel China working on leading edge 3D NAND
product. Intel and SK Hynix have an agreement for SK Hynix to acquire Intel's
NAND memory and storage business. and Intel will continue to manufacture NAND
wafers at the Dalian memory manufacturing until the final closing expected to
occur in March 2025. Intel DMTM will continue to build on the success of our
NAND technology at a greater scale, play a larger role in supporting our
customers.

We are seeking an experienced component-level product/test development
engineer to contribute to the development, optimization, and implementation of
test strategies for our next generation NAND Flash memory products. This role
is critical in ensuring that our NAND products meet the necessary
specifications and quality standards before they reach the market. This is an
excellent opportunity for experienced engineers seeking to work on industry
leading QLC NAND technology critical for building datacenter storage solutions
in the AI era.

Major responsibilities include:
1. Develop burn-in and high speed I/O test plans, procedures, and validation
methodologies for NAND flash memory components.
2. Lead the execution of electrical testing of NAND components to validate
functionality, performance, and reliability.
3. Analyze test data to identify trends, anomalies, and areas for improvement
in product design or manufacturing processes.
4. Optimize test methodologies to improve test coverage, efficiency, and cycle
time.
5. Provide technical expertise and support for yield enhancement and failure
analysis activities.
6. Collaborate with design, process, and reliability engineering teams to
troubleshoot and resolve complex test failures.



Qualifications:

Minimum Qualifications:
1. Master's degree in Electrical/Electronic Engineering, Computer Engineering,
Semiconductor Circuit Design, or related fields.
2. 5 years of experience in logic/memory product engineering or test
engineering.
3. Proficient in statistical data analysis and electrical failure analysis to
segment and determine root cause of test failures.
4. Knowledge of burn-in and high speed I/O test platforms and architectures.
5. Knowledge of NAND Flash memory technology, including architecture and
operation.
6. Excellent communication and teamwork abilities, with experience working in
a multi-disciplinary engineering environment.
7. Proven track record of technical leadership and ability to work
independently.

Preferred Qualifications:
1. 8 years of experience in memory product/test engineering, with majority of
it in NAND Flash.
2. Experienced in leading burn-in/high speed I/O test development on multiple
logic/memory products from early definition to mass production phase.
3. Extensive experience in development/validation/optimization of high speed
I/O testing methodologies, with consideration of fabrication process and design
corners.

This position is associated with the sale of Intel's NAND memory and storage
business to SK. This transaction will enhance the resources and potential of
the business' storage, and you will be joining a world-class team that will
transition to lead the SSD business at SK group. We will keep you informed
updates and steps related to this transaction.